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Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm 0.7±0.1 s Features q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed .
q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150
–55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Symbol VCBO .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1960 |
Rohm |
NPN Silicon Transistor |
|
| 2 | 2SD1961 |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 3 | 2SD1962M |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 4 | 2SD1963 |
Rohm |
Power Transistor |
|
| 5 | 2SD1963 |
Kexin |
Power Transistor |
|
| 6 | 2SD1966 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 8 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 12 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|