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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 650V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB IBM PC TJ .
ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A MIN TYP. MAX UNIT 650 V 6 V 5.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance tf Fall Time IC= 6A; IB= 1.2A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 6V ; IC= 0 IC= 1A ;.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1950 |
NEC |
NPN Silicon Transistor |
|
| 2 | 2SD1953 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SD1957 |
Rohm |
Power Transistor |
|
| 4 | 2SD1957 |
Rohm |
Power Transistor |
|
| 5 | 2SD1958 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD1958 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 8 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 12 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|