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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; f= 1.0MHz IC= 0.5A; IB1= IB2= 50mA; VCC= 20V; RL= 40Ω 2SD1958 MIN TYP. MAX UNIT .
2SD1958 - SavantIC
·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output ·High-current swit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1950 |
NEC |
NPN Silicon Transistor |
|
| 2 | 2SD1953 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SD1957 |
Rohm |
Power Transistor |
|
| 4 | 2SD1957 |
Rohm |
Power Transistor |
|
| 5 | 2SD1959 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 7 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 10 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 11 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 12 | 2SD1908 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|