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With TO-3PFM package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter v.
ff current DC current gain DC current gain CONDITIONS IC=0.1A , IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 8 5 MIN 600 www.datasheet4u.com 2SD1941 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 3.0 5.0 1.5 10 1 36 V V µA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1941 Fig.2 outline dimensions 3 .
2SD1941 - INCHANGE
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device perf.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1940 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD1940 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1943 |
Rohm |
Triple Diffused Planer NPN Silicon Transistor |
|
| 4 | 2SD1944 |
Rohm |
High-current gain Power Transistor |
|
| 5 | 2SD1947A |
Toshiba Semiconductor |
NPN EPITAXIAL TYPE TRANSISTOR |
|
| 6 | 2SD1949 |
Rohm |
Medium Power Transistor |
|
| 7 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 8 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 12 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|