·With TO-220F package ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 25 to 30W output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage .
-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=8 IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 110 MIN 85 100 6 www.datasheet4u.com 2SD1940 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V 2.0 1.5 0.1 0.1 320 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=0.5A; IB1=-IB2=50mA VCC=20V ,RL=40B 0.28 3.60 0.50 µs µs.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1941 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD1941 |
INCHANGE |
NPN Transistor | |
3 | 2SD1943 |
Rohm |
Triple Diffused Planer NPN Silicon Transistor | |
4 | 2SD1944 |
Rohm |
High-current gain Power Transistor | |
5 | 2SD1947A |
Toshiba Semiconductor |
NPN EPITAXIAL TYPE TRANSISTOR | |
6 | 2SD1949 |
Rohm |
Medium Power Transistor | |
7 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors | |
8 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
9 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
10 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor | |
11 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors | |
12 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |