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·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.
d SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 4mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 2A; VCE= 2V hFE -2 DC Current Gain IC= 6A; VCE= 2V Switching times ton Turn-on Time tstg Storage Time IC= 4A, IB1= IB2= 4mA tf Fall Time 2SD1928 MIN TYP. MAX UNIT 1.5 V 2.0 V 10 μA 3.0 mA 2000 20000 500 0.4 μs 2.5 μs 0.5 μs NOTICE： ISC reserves the rights to make changes of the content h.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1922 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1923 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1929 |
Rohm |
Transistor |
|
| 4 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 5 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 8 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 9 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 10 | 2SD1908 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1910 |
INCHANGE |
NPN Transistor |
|