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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid, relay and motor, series regulator and genera.
CAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1923 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 5 mA hFE DC Current Gain IC= 2A ; VCE= 3V 2000 fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= 10V 50 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 45 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1922 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1928 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1929 |
Rohm |
Transistor |
|
| 4 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 5 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 8 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 9 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 10 | 2SD1908 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1910 |
INCHANGE |
NPN Transistor |
|