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2SD1913 - GME

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2SD1913 Power Transistor

Power Transistor(60V,3A ) FEATURES z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCB.

Features

z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature 60 V 6V 3A 2W -55 to +150 ℃ X097 Rev.A www.gmicroelec.com 1 Production specification Power Tr.

The same part from a different manufacturer

Datasheet 2SD1913 - SavantIC 2SD1913

·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low sa.

Datasheet 2SD1913 - BLUE ROCKET ELECTRONICS 2SD1913

TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,,。 Wide ASO, low saturation voltag.

Datasheet 2SD1913 - Sanyo Semicon Device 2SD1913

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Fre.

Datasheet 2SD1913 - INCHANGE 2SD1913

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1274 ·Min.

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