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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Vol.
uration Voltage IC= 4.5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A 2SD1911 MIN TYP. MAX UNIT 6 V 5.0 V 1.5 V 0.5 mA 8 2.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products a.
2SD1911 - SavantIC
·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV h.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD1910 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1912 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SD1912 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1913 |
GME |
Power Transistor |
|
| 6 | 2SD1913 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD1913 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1913 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1913 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1914 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1918 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 2SD1918 |
Rohm |
Power Transistor |
|