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2SD1911 |
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| Part Number | 2SD1911 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
uration Voltage IC= 4.5A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.2A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 5A
2SD1911
MIN TYP. MAX UNIT
6
V
5.0
V
1.5
V
0.5 mA
8
2.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products a... |
| Document |
 2SD1911 Data Sheet
PDF 210.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD1910 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1911 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1912 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SD1912 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|