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2SD1850 |
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| Part Number | 2SD1850 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection ou... |
| Features |
n Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0 VCB= 1300V; IE= 0
fT
Transition Frequency
IC= 1A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 6A; IB1= 1.5A; IB2= 3A, VCC= 200V
2SD1850
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
5
25
4.5
10 μA
1.0 mA
2
MHz
1.5
μs
0.2
μs
NOTICE： ISC reserves the rights to make changes... |
| Document |
 2SD1850 Data Sheet
PDF 210.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1851 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SD1852 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1853 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 4 | 2SD1854 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 5 | 2SD1855 |
INCHANGE |
NPN Transistor |
|