SHINDENGEN Darlington Transistor 2SD1790 (TP4L6Z) •} 4A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`+150 •Ž Junction TemperatureTj +150 •Ž •}10 Collector to Base Voltage V 60 V CBO •}10 Collector to Emitter Voltage V 60 V CEO Emitter to Base Voltage V .
turation V (sat)I Voltage = 2mA Max 2.0 V BE B Thermal Resistance ĮjcJunction to case Max 5.0
•Ž/W Transition Frequency fT V = 10V, = 0.4A I TYP 20 MHz CE C Turn on Time ton Max 2 I = 1A C Storage Time ts I =B2 I = 2mA Max 12 ƒÊs B1 R = 25ƒ¶ L Fall Time tf V = 4V Max 5 BB2
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SD1790
hFE - I C
VCE = 3V
10000
1000 50°C
100°C
Tc = 150°C
DC Current Gain hFE
100 25°C
0 °C
− 25°C
− 55°C 0.1 1 6
10 0.01
Collector Current IC [A]
2SD1790
Saturation Voltage
3 2A 4A 1A 2.5 6A 5A 4A 3A 2A 1A 1.5 2 3A 5A 6A
3
IC = 0.1A
2.5
0.5A
2
1.5
0.
·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust devi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1791 |
INCHANGE |
NPN Transistor | |
2 | 2SD1791 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
3 | 2SD1792 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
4 | 2SD1792 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1793 |
INCHANGE |
NPN Transistor | |
6 | 2SD1793 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
7 | 2SD1794 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
8 | 2SD1795 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor | |
9 | 2SD1796 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
10 | 2SD1799 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
11 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR | |
12 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR |