2SD1790 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1790

INCHANGE
2SD1790
2SD1790 2SD1790
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Part Number 2SD1790
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequenc...
Features NGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 2mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1A, VCE= 3V fT Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf ...

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