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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Coll.
ark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 5mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 3A, VCE= 3V fT Current-Gain—Bandwidth Product IC= 0.7A; VCE= 10V Switching Times; Resistive Load ton Turn-On Time ts Storag.
2SD1791 - Shindengen Electric Mfg.Co.Ltd
SHINDENGEN Darlington Transistor 2SD1791 (TP7L10) 7A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1790 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1790 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 3 | 2SD1792 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 4 | 2SD1792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1793 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1793 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 7 | 2SD1794 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 8 | 2SD1795 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 9 | 2SD1796 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor |
|
| 10 | 2SD1799 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR |
|
| 12 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR |
|