2SD1761 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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2SD1761

Inchange Semiconductor
2SD1761
2SD1761 2SD1761
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Part Number 2SD1761
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation...
Features 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1MHz fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= 5V
 hFE Classifications D E F 60-120 100-200 160-320 2SD1761 MIN TYP. MAX UNIT 60 V 80 V 5 V 1.0 ...

Document Datasheet 2SD1761 Data Sheet
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