2SD1739 - INCHANGE

2SD1739 NPN Transistor

·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1.

Features

) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A hFE DC Current Gain IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1300V; IE= 0 fT Transition Frequency IC= 1A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 5A; IB1= 1A; IB2= 2A, VCC= 200V 2SD1739 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 6 30 10 μA 1.0 mA 2 MHz 1.5 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio.