2SD1734 - Inchange Semiconductor

2SD1734 Power Transistor

·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 13.

Features

Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.4A hFE DC Current Gain IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1300V; IE= 0 fT Transition Frequency IC= 0.5A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 1A; IB1= 0.3A; IB2= 0.6A, VCC= 200V 2SD1734 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 6 30 10 μA 1.0 mA 2 MHz 1.0 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf.