2SD1732 - Inchange Semiconductor

2SD1732 Power Transistor

·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collec.

Features

200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.4A hFE DC Current Gain IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1300V; IE= 0 VECF C-E Diode Forward Voltage IF= 7A fT Transition Frequency IC= 1A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 6A; IB1= 1.2A; IB2= 2.4A, VCC= 200V 2SD1732 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 5 25 10 μA 1.0 mA 2.3 V 2 MHz 1.5 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the c.