·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
aturation Voltage IC= 8A; IB= 0.8A VBE(on) Base -Emitter On Voltage IC= 8A; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain IC= 8A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V MIN TYP. MAX UNIT 2.0 V 1.8 V 50 μA 50 μA 20 60 200 20 250 pF 20 MHz hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC reserves the rights to m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1710 |
INCHANGE |
NPN Transistor | |
2 | 2SD1710 |
MCC |
NPN Silicon Power Transistors | |
3 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
5 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
6 | 2SD1710C |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SD1710F |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
8 | 2SD1711 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SD1711 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
10 | 2SD1712 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1712 |
INCHANGE |
NPN Transistor | |
12 | 2SD1713 |
Inchange Semiconductor |
Power Transistor |