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·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter v.
nt gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A ;IB=0.3A IC=3A ; VCE=5V VCB=100V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 20 60 20 MIN www.datasheet4u.com 2SD1712 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX 2.0 1.8 50 50 UNIT V V µA µA 200 70 20 pF MHz hFE-2 classifications Q 60-120 S 80-60 P 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1712 Fig.2 Outline dimensions (uni.
2SD1712 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complem.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1710 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 3 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD1710C |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SD1710F |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SD1711 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1711 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SD1713 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD1714 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SD1715 |
SavantIC |
SILICON POWER TRANSISTOR |
|