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·With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Co.
urrent Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=100mA;IB=0 IC=4A;IB=0.8 A IC=4A;IB=0.8 A VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=0.5 A ; VCE=5V 10 40 MIN 800 www.datasheet4u.com 2SD1711 SYMBOL VCEO(SUS) VCEsat VBEsat IEBO ICBO ICES hFE TYP. MAX UNIT V 5.0 1.5 130 10 1 40 V V mA µA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1711 Fig.2 Outline dimensions 3 .
2SD1711 - Inchange Semiconductor
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1710 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 3 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD1710C |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SD1710F |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SD1712 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1712 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1713 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD1714 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SD1715 |
SavantIC |
SILICON POWER TRANSISTOR |
|