2SD1712 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1712

INCHANGE
2SD1712
2SD1712 2SD1712
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Part Number 2SD1712
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1157 ·Minimum Lot-to-Lot variations for robust device performance...
Features ation Voltage IC= 3A; IB= 0.3A VBE(on) Base -Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain IC= 3A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V MIN TYP. MAX UNIT 2.0 V 1.8 V 50 μA 50 μA 20 60 200 20 70 pF 20 MHz
 hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC reserves the rights to make c...

Document Datasheet 2SD1712 Data Sheet
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