Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdow.
· Low-saturation collector-to-emitter voltage : VCE(sat)=
–0.4V max.
· Wide ASO leading to high resistance to breakdown.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2041A
[2SB1135/2SD1668]
( ) : 2SB1135
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Sy.
·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1135 ·Low collector saturation voltage ·Wide safe opera.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.) ·Wi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1662 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1662 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | 2SD1663 |
Inchange Semiconductor |
Power Transistor | |
4 | 2SD1664 |
Rohm |
Medium Power Transistor | |
5 | 2SD1664 |
FASTSTAR SEMICONDUCTOR |
1A Medium Power Silicon Transistor | |
6 | 2SD1664 |
UTC |
MEDIUM POWER NPN TRANSISTOR | |
7 | 2SD1664 |
SeCoS |
NPN Silicon General Purpose Transistor | |
8 | 2SD1664 |
AiT Semiconductor |
NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR | |
9 | 2SD1664-HF |
Kexin |
NPN Transistors | |
10 | 2SD1666 |
INCHANGE |
NPN Transistor | |
11 | 2SD1666 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD1667 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |