2SD1663 - Inchange Semiconductor

2SD1663 Power Transistor

·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 .

Features

mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE DC Current Gain VEB= 7.7V; IC= 0 VCB= 750V; IE= 0 VCB= 1300V; IE= 0 IC= 1A; VCE= 5V Switching times ton Turn-On Time tstg Storage Time IC= 2.5A, IB1= 0.5A, IB2= -1A tf Fall Time 2SD1663 MIN TYP. MAX UNIT 700 V 2.0 V 1.5 V 100 μA 50 μA 1.0 mA 18 50 1.0 μs 3.0 μs 0.5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat.