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2SD1668 |
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| Part Number | 2SD1668 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.) ·Wide Area of Safe Operation ·Complement to Type 2SB1135 ·Minimum Lot-to-Lot variat... |
| Features |
nless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 40V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fal... |
| Document |
 2SD1668 Data Sheet
PDF 210.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1662 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1662 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SD1663 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1664 |
Rohm |
Medium Power Transistor |
|
| 5 | 2SD1664 |
FASTSTAR SEMICONDUCTOR |
1A Medium Power Silicon Transistor |
|