2SD1566 - INCHANGE

2SD1566 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 10A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

Features

ER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 10A; VCE= 2V VECF C-E Diode Forward Voltage IF= 10A fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= IB2= 25mA; RL= 5Ω; VCC= 50V MIN TYP. MAX UNIT 100 V 1.5 V 2.0 V 10 μA 5 mA 100.