·With TO-126 package www.datasheet4u.com ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V(min) APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAME.
VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50µA ;IE=0 IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 160 V Emitter-base breakdown voltage 5 V Collector-base breakdown voltage 160 V Collector-emitter saturation voltage 2.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 1.0 µA Emitter cut-off current 1.0 µA DC current gain 56 270 Transition frequency 80 MHz Output capacitance 20 pF hFE Classifications N 56-120 P 82-180.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086A ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1563 |
INCHANGE |
NPN Transistor | |
2 | 2SD1562 |
INCHANGE |
NPN Transistor | |
3 | 2SD1562 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1562A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1564 |
INCHANGE |
NPN Transistor | |
6 | 2SD1565 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD1565 |
INCHANGE |
NPN Transistor | |
8 | 2SD1566 |
INCHANGE |
NPN Transistor | |
9 | 2SD1500 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SD1503 |
INCHANGE |
NPN Transistor | |
11 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1505 |
SavantIC |
SILICON POWER TRANSISTOR |