·With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2.
B=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 2SD1562 hFE DC current gain 2SD1562A fT COB Transition frequency Output capacitance IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=5V CONDITIONS www.datasheet4u.com 2SD1562 2SD1562A SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 160 120 V 160 5 2.0 1.5 1.0 1.0 60 60 80 20 320 200 MHz pF V V V µA µA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on saturation voltage Collector cut-off cur.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1085 ·M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1562A |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD1563 |
INCHANGE |
NPN Transistor | |
3 | 2SD1563A |
INCHANGE |
NPN Transistor | |
4 | 2SD1563A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1564 |
INCHANGE |
NPN Transistor | |
6 | 2SD1565 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD1565 |
INCHANGE |
NPN Transistor | |
8 | 2SD1566 |
INCHANGE |
NPN Transistor | |
9 | 2SD1500 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SD1503 |
INCHANGE |
NPN Transistor | |
11 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1505 |
SavantIC |
SILICON POWER TRANSISTOR |