2SD1532 - INCHANGE

2SD1532 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.

Features

otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA ,IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3.0A ; VCE= 3V ICBO Collector Cutoff Current VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 120V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 4V hFE-2 DC Current Gain IC= 2A ; VCE= 4V MIN TYP. MAX UNIT 120 V 5 V 2.0 V 2.5 V 0.1 mA 0.1 mA 2 mA 100.