2SD1531 - Inchange Semiconductor

2SD1531 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50.

Features

Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 50V; IE= 0 ICEO Collector Cutoff Current VCE= 10V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz  hFE Classifications P Q R 50-100 80-160 120-220 2SD1531 MIN TYP. MAX UNIT 50 V 40 V 1.0 V 1.5 V 1.0 μA 100 .