2SD1532 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1532

INCHANGE
2SD1532
2SD1532 2SD1532
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Part Number 2SD1532
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance ...
Features otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA ,IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3.0A ; VCE= 3V ICBO Collector Cutoff Current VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 120V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 4V hFE-2 DC Current Gain IC= 2A ; VCE= 4V MIN TYP. MAX UNIT 120 V 5 V 2.0 V 2.5 V 0.1 mA 0.1 mA 2 mA 100...

Document Datasheet 2SD1532 Data Sheet
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