2SD1296 - NEC

2SD1296 Darlington Power Transistors

¡¤ With TO-3PN package ¡¤ High DC current gain ¡¤ Low saturation voltage APPLICATIONS ¡¤ For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO.

Features

otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V 1000 MIN 100 TYP. 2SD1296 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V 1.5 2.2 10 5 30000 ¦Ì V V A mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=15A; IB1=-IB2=30mA VCC¡Ö 60V;RL=4Ω 1.0 5.0 2.0 ¦Ì ¦Ì ¦Ì s s s www.DataSheet4U.com L K 4000-10000 J 8000-30000 .