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·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM P.
ge IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2.5A ; VCE=10V 4 12 ts Storage time IC=2.5A ILeak=0.8A,LB=5µH 4 8 µs tf Fall time 1 µs VF Diode forward voltage IF=-4A,IB=0 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1291 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) .
2SD1291 - INCHANGE
·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device perfo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD129 |
ETC |
(2SD129 / 2SD130) Silicon NPN Transistor |
|
| 2 | 2SD1290 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1290 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1292 |
Rohm |
NPN Transistor |
|
| 5 | 2SD1293M |
Rohm |
NPN Transistor |
|
| 6 | 2SD1294 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1294 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SD1294 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1295 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SD1296 |
NEC |
Darlington Power Transistors |
|
| 11 | 2SD1296 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1296 |
SavantIC |
SILICON POWER TRANSISTOR |
|