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2SD1296 |
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| Part Number | 2SD1296 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust ... |
| Features |
isc Silicon NPN Darlington Power Transistor
2SD1296
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 30mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ,IB= 30mA
2.2
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
10
mA
hFE
DC Current Gain
IC= 15A ; VCE= 2V
1000
30000
Switching Times
ton
Turn-On Time
tstg
Storage Time
... |
| Document |
 2SD1296 Data Sheet
PDF 217.00KB |
| Distributor | Stock | Price | Buy |
|---|
