2SD1248 - Inchange Semiconductor

2SD1248 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN.

Features

IC= 25mA; RBE= ∞ V(BR)EBO Emitter -Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain IC= 4A; VCE= 3V VECF C-E Diode Forward Voltage IF= 8A 2SD1248 MIN TYP. MAX UNIT 120 V 7 V 1.5 V 3.0 V 2.0 V 3.5 V 100 μA 10 μA .