2SD1242 - INCHANGE

2SD1242 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers . Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO C.

Features

Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 3V hFE-2 DC Current Gain IC= 6A ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V MIN MAX UNIT 60 60 10 1..