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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers . Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO C.
O Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 3V hFE-2 DC Current Gain IC= 8A ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V MIN MAX UNIT 60 60 10 .
2SD1243 - SavantIC
·With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power am.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1241 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1242 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1244 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1245 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1246 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD1247 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SD1248 |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SD1249 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD1249 |
Kexin |
Silicon NPN Transistor |
|
| 10 | 2SD1249A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1249A |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SD1200 |
ROHM |
NPN Silicon Transistor |
|