·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications. ABSOLUTE MAXIMUM RATINGS(.
S MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=30mA ; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 1.0 2.0 V VBE(on) Base -Emitter On Voltage IC= 1A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 5A; VCE= 5V 20 COB Output Capacitance IE= 0;VC.
Ordering number:ENN677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output.
·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1040 |
INCHANGE |
NPN Transistor | |
2 | 2SD1044 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
3 | 2SD1047 |
INCHANGE |
NPN Transistor | |
4 | 2SD1047 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors | |
5 | 2SD1047 |
STMicroelectronics |
NPN Transistor | |
6 | 2SD1047C |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SD1047E |
INCHANGE |
NPN Transistor | |
8 | 2SD1047P |
Sanyo Semiconductor |
General-Purpose Amplifier Transistors | |
9 | 2SD1048 |
ON Semiconductor |
Bipolar Transistor | |
10 | 2SD1048 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
11 | 2SD1048 |
Kexin |
NPN Epitaxial Planar Silicon Transistors | |
12 | 2SD1049 |
INCHANGE |
NPN Transistor |