Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High Current Capability ·Fast Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-.
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 25A; IB= 2.5A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 25A; VCE= 5V Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time IC= 25A; IB1= IB2= 2.5A; RL= 3Ω, PW= 20μs; Duty≤ 2% 2SD1049 MIN TYP. MA.
2SD1049 - SavantIC
·With TO-3PN package www.datasheet4u.com ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1040 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1044 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1046 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD1046 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1046 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD1047 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1047 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors |
|
| 8 | 2SD1047 |
STMicroelectronics |
NPN Transistor |
|
| 9 | 2SD1047C |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SD1047E |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1047P |
Sanyo Semiconductor |
General-Purpose Amplifier Transistors |
|
| 12 | 2SD1048 |
ON Semiconductor |
Bipolar Transistor |
|
