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2SD1046 |
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| Part Number | 2SD1046 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for r... |
| Features |
S
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC=30mA ; RBE= ∞
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
1.0 2.0
V
VBE(on) Base -Emitter On Voltage
IC= 1A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
60
200
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
20
COB
Output Capacitance
IE= 0;VC... |
| Document |
 2SD1046 Data Sheet
PDF 216.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1040 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1044 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1046 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD1046 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1047 |
INCHANGE |
NPN Transistor |
|