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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT .
RAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A hFE DC Current Gain IC= 0.3A; VCE=10V ICBO Collector Cutoff Current VCB=300V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 MIN TYP. MAX UNIT 300 V 5.0 V 1.5 V 30 200 50 uA 0.1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for t.
2SC792 - SavantIC
·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator,inverter,switching mode power supply appl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC790 |
Toshiba Semiconductor |
NPN Transistor |
|
| 2 | 2SC790 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SC799 |
ETC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 4 | 2SC710 |
Mitsubishi |
Small Signal Transistor |
|
| 5 | 2SC717 |
ETC |
Silicon NPN Epitaxial Type Transistor |
|
| 6 | 2SC730 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC732 |
SEMTECH |
NPN Silicon Transistor |
|
| 8 | 2SC732TM |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC733 |
ETC |
Transistor |
|
| 10 | 2SC734 |
NEC |
Silicon NPN Transistor |
|
| 11 | 2SC735 |
Micro Electronics |
(2SCxxx) Low Level and General Purpose Amplifiers |
|
| 12 | 2SC735 |
Toshiba |
Silicon NPN Epitaxial Transistor |
|