2SC792 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SC792

INCHANGE
2SC792
2SC792 2SC792
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Part Number 2SC792
Manufacturer INCHANGE
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation...
Features RAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A hFE DC Current Gain IC= 0.3A; VCE=10V ICBO Collector Cutoff Current VCB=300V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 MIN TYP. MAX UNIT 300 V 5.0 V 1.5 V 30 200 50 uA 0.1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for t...

Document Datasheet 2SC792 Data Sheet
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