2SC790 - Inchange Semiconductor

2SC790 Silicon NPN Power Transistor

·Low Collector Saturation Voltage- : VCE(sat)= 1.4(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.

Features

at) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 2A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 2V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz  hFE-1 Classifications R O Y 40-80 70-140 120-240 MIN TYP. MAX UNIT 40 V 5 V 1.4 V 1.8 V 10 μA 100 μA 40 240 13 3 MHz 70 pF isc website：www.iscsemi.cn 2 isc & iscsemi is r.