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www.DataSheet4U.com Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2048B [2SC5933] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Ad.
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Package Dimensions
unit : mm 2048B
[2SC5933]
6.0
20.0 3.3 5.0
High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process.
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5930 |
Toshiba Semiconductor |
Silicon NPN Triple Diffused Type Transistor |
|
| 2 | 2SC5931 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5932 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC5934 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC5935 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC5936 |
ETC |
Transistor |
|
| 7 | 2SC5938 |
Isahaya Electronics Corporation |
Silicon NPN Epitaxial Type Transistor |
|
| 8 | 2SC5939 |
Panasonic Semiconductor |
NPN Transistor |
|
| 9 | 2SC5939G |
Panasonic |
Silicon NPN Transistor |
|
| 10 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC5902 |
INCHANGE |
NPN Transistor |
|