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Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 • High transition frequency fT 0.4±0.2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga.
• Low noise figure NF
0.40+
–00..0150 3
0.16+
–00..0160
1.50
–+00..0255 2.8
–+00..32
• High transition frequency fT
0.4±0.2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/
■ Absolute Maximum Ratings Ta = 25°C
2.90+
–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
V
c e. d ty Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
0 to 0.1 1.1
–+00..12 1.1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5550 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5551 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5551A |
ON Semiconductor |
RF Transistor |
|
| 4 | 2SC5552 |
Panasonic Semiconductor |
NPN Transistor |
|
| 5 | 2SC5552 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5553 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5554 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 8 | 2SC5554 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5555 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5557 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | 2SC5501 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5501A |
ON Semiconductor |
RF Transistor |
|