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Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (.
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/
■ Absolute Maximum Ratings TC = 25°C
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
1 700
V
c e. d ty Collector-emitter voltage (E-B short) VCES
1 700
3.3±0.3
5.5±0.3
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
600
(2.0).
2SC5552 - INCHANGE
·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche teste.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5550 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5551 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5551A |
ON Semiconductor |
RF Transistor |
|
| 4 | 2SC5553 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5554 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 6 | 2SC5554 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5555 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5556 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC5557 |
Panasonic |
Silicon NPN Transistor |
|
| 10 | 2SC5501 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5501A |
ON Semiconductor |
RF Transistor |
|
| 12 | 2SC5502 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|