2SC5550 - Toshiba Semiconductor

2SC5550 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System 2SC5550 Unit: mm • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C).

Features

r saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 320 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.04 A IC = 0.2 A, IB = 25 mA IC = 0.2 A, IB = 25 mA Min Typ. Max Unit ― ― 100 µA ― ― 100 µA 400 ― ― V 400 ― ― V 13 ― ― 20 ― 65 ― ― 1.0 V ― ― 1.3 V Rise time Switching time Storage time IB1 IB2 833 Ω tr VCC ≈ 200 V 20 µs IC ― ― 0.5 tstg Input IB1 Output ― ― 5.0 µs IB2 Fall time tf IB1 = 0.03 A, IB2 = −0.06 A, Duty cyc.