Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.5 3.2 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 Specificati.
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.5 3.2 7.2 4.5 2.8
16.1
16.0
0.9 1.2 14.0
3.6
0.75 1 2 3
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25°C Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO220FI (LS.
·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications PINNING.
·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5411 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5411 |
INCHANGE |
PNP Transistor | |
3 | 2SC5412 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5413 |
Panasonic |
NPN Power Transistors | |
5 | 2SC5414 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5414A |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
7 | 2SC5415 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
8 | 2SC5415A |
ON Semiconductor |
RF Transistor | |
9 | 2SC5416LS |
Wing Shing Computer Components |
NPN TRANSISTOR | |
10 | 2SC5417 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
11 | 2SC5417 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC5417 |
INCHANGE |
NPN Transistor |