Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratin.
· High gain : S21e =9dB typ (f=1GHz).
· High cutoff frequency : fT=6.7GHz typ.
2
Package Dimensions
unit:mm 2038A
[2SC5415]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 20 12 2 100 800 150
–55 t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5411 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5411 |
INCHANGE |
PNP Transistor | |
3 | 2SC5412 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5413 |
Panasonic |
NPN Power Transistors | |
5 | 2SC5414 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5414A |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
7 | 2SC5415A |
ON Semiconductor |
RF Transistor | |
8 | 2SC5416 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5416 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC5416 |
INCHANGE |
NPN Transistor | |
11 | 2SC5416LS |
Wing Shing Computer Components |
NPN TRANSISTOR | |
12 | 2SC5417 |
Sanyo Semicon Device |
NPN TRANSISTOR |