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Ordering number:ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =9.5dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 Specifications Absolute Maximum Rati.
· High gain : S21e =9.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.7GHz typ.
2
Package Dimensions
unit:mm 2004B
[2SC5414]
5.0 4.0 4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
14.0
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
1.3
1.3
1 : Base 2 : Emitter 3 : Collector SANYO : NP
Ratings 20 12 2 100 400 150
–55 to +150
Unit V V V mA mW ˚C ˚C
Electrical Cha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5411 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5411 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SC5412 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5413 |
Panasonic |
NPN Power Transistors |
|
| 5 | 2SC5414A |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC5415 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC5415A |
ON Semiconductor |
RF Transistor |
|
| 8 | 2SC5416 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC5416 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC5416 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5416LS |
Wing Shing Computer Components |
NPN TRANSISTOR |
|
| 12 | 2SC5417 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|